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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION *With TO-126 package *High voltage,high speed APPLICATIONS *For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 0.5 1.0 0.75 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Collector cut-off current CONDITIONS IC=0.1A; RBE=:,L=100mH IE=10mA; IC=0 IC=250mA; IB=50m A IC=250mA ;IB=50m A IC=250mA ; VCE=5V IC=500mA ; VCE=5V VCB=400V; IE=0 VCE=350V; RBE=: 15 7 MIN 400 10 2SC2899 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 ICBO ICEO TYP. MAX UNIT V V 1.0 1.5 V V 20 50 A A Switching times ton tstg tf Turn-on time Storage time Fall time IC=0.5A; IB1=-IB2=0.1A VCC?150V 1.0 2.0 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2899 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 4 |
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